Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDC6304P

  • FDC6304P
  • FDC6304P

FDC6304P

FDC6304P

ON Semiconductor

FDC6304P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDC6304P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.1Ohm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 700mW
Terminal Form GULL WING
Current Rating -460mA
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
Turn On Delay Time 7 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C 460mA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 8ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) -460mA
Threshold Voltage -860mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.647702 $0.647702
10 $0.611040 $6.1104
100 $0.576453 $57.6453
500 $0.543823 $271.9115
1000 $0.513041 $513.041
FDC6304P Product Details

FDC6304P           Description

 

These P-channel enhanced mode field effect transistors are produced using on Semiconductor's proprietary high cell density. DMOS technology. This very high-density process is tailor-made to minimize on-resistance under low gate driving conditions. The device is designed for battery-powered applications such as laptops and mobile phones. The device has excellent on-resistance even at a gate drive voltage as low as 2.5 volts.

 

FDC6304P        Features


-25V.-0.46 Acontinuous-1.0APeak. RpsiON=1.5|[email protected]=-2.7V RD8ION=1.1|[email protected]=-4.5V.

Very low level gate drive requirements allowing direc! operation in 3V circuits. Vcs<1.5V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model.

 

FDC6304P          Applications


battery-powered applications

 





Related Part Number

CTLDM304P-M832DS TR
Central Semiconductor Corp
CTLDM304P-M832DS TR
$0 $/piece
NVMFD5853NT1G
ON Semiconductor
NVMFD5853NT1G
$0 $/piece
QS6K21TR
ROHM Semiconductor
QS6K21TR
$0 $/piece
FDMS3615S
ON Semiconductor
FDMS3615S
$0 $/piece
NTMD4N03R2
ON SEMICONDUCTOR
NTMD4N03R2
$0 $/piece
IRFI4019H-117P
Infineon Technologies
IRFI4019H-117P
$0 $/piece
SP8K32FRATB
ROHM Semiconductor
SP8K32FRATB
$0 $/piece
FDS6894A
Rochester Electronics, LLC
FDS6894A
$0 $/piece
FDS8958
Rochester Electronics, LLC
FDS8958
$0 $/piece
IRF7506TRPBF
Infineon Technologies
IRF7506TRPBF
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News