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FDC634P

FDC634P

FDC634P

ON Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 80m Ω @ 3.5A, 4.5V ±8V 779pF @ 10V 10nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6

SOT-23

FDC634P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 80MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -3.5A
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 779pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) -3.5A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Nominal Vgs -800 mV
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.18636 $0.55908
6,000 $0.17433 $1.04598
15,000 $0.16231 $2.43465
30,000 $0.15389 $4.6167
FDC634P Product Details

FDC634P Description

 

FDC634P MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDC634P datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDC634P is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

 

 

FDC634P Features

 

High performance trench technology

RDS(ON) = 80 m|? @ VGS = -4.5 V

Low gate charge

RDS(ON) = 110 m|? @ VGS = -2.5 V

3.5 A, -20 V

 

 

FDC634P Applications

 

Power factor correction

Electronic lamp ballasts

Flat panel display

TV power

ATX 


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