APTM120DA30CT1G

new-10%

Manufacturer part number:APTM120DA30CT1G

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 1.2KV 31A 12-Pin Case SP-1

Case Package:SOT-23

Datasheet:APTM120DA30CT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw, Through Hole
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1997
Series	POWER MOS 8™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	657W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	657W
Case Connection	ISOLATED
Turn On Delay Time	100 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	14560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	560nC @ 10V
Rise Time	60ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	315 ns
Continuous Drain Current (ID)	31A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.36Ohm
Radiation Hardening	No
RoHS Status	RoHS Compliant