IXFP6N120P

new-10%

Manufacturer part number:IXFP6N120P

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 6A TO-220AB

Case Package:SOT-23

Datasheet:IXFP6N120P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, PolarP2™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2830pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.0024Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	1200V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free