FDC6420C

new-10%

FDC6420C

Manufacturer part number:FDC6420C

Manufacturer:ON Semiconductor

Description:ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV

Case Package:SOT-23

Datasheet:FDC6420C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	70MOhm
Terminal Finish	TIN (SN)
Subcategory	Other Transistors
Max Power Dissipation	700mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	324pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A 2.2A
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V
Rise Time	12ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	12 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	900 mV
Height	900μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free