FDC699P Description

The P-Channel 2.5V specified MOSFET FDC699P is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
FDC699P Features

–7 A, –20 V RDS(ON) = 22 m? @ VGS = –4.5 V
RDS(ON) = 30 m? @ VGS = –2.5 V
High performance trench technology for extremely low RDS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size
FDC699P Applications

Battery management
Load Switch
Battery protection