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FDC796N

  • FDC796N
  • FDC796N

FDC796N

FDC796N

ON Semiconductor

FDC796N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDC796N Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package SuperSOT™-6 FLMP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1444pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12.5A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.186080 $14.18608
10 $13.383094 $133.83094
100 $12.625561 $1262.5561
500 $11.910906 $5955.453
1000 $11.236704 $11236.704
FDC796N Product Details

FDC796N Description


The N-channel MOSFET FDC796N is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS and fast switching speed.


FDC796N Applications


DC/DC converter

Power management

Load switch

 

 

FDC796N Features

 

12.5 A 30 V. RDS(ON)=9mΩ@Vs=10V RDS(ON)=12mΩ@Vgs=4.5V

High performance trench technology for extremely low RDS(ON)

Low gate charge

.High power and current handling capability

.Fast switching speed

 


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