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FDD107AN06LA0

FDD107AN06LA0

FDD107AN06LA0

ON Semiconductor

MOSFET N-CH 60V 10.9A D-PAK

SOT-23

FDD107AN06LA0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 25W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 91mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta 10.9A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V

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