IRLML2502GTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLML2502GTRPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
45MOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
1.25W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.25W
Turn On Delay Time
7.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4.2A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
54 ns
Continuous Drain Current (ID)
4.2A
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
Height
1.016mm
Length
3.0226mm
Width
1.397mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.12741
$0.38223
IRLML2502GTRPBF Product Details
IRLML2502GTRPBF Description
IRLML2502GTRPBF is a kind of N-channel HEXFET? power MOSFETs designed based on advanced processing techniques to make extremely low on-resistance per silicon area possible. Moreover, IRLML2502GTRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All these make the device more efficient and reliable for battery and load management.