STS4NF100

new-10%

Manufacturer part number:STS4NF100

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 100V 4A 8-Pin SO N T/R

Case Package:SOT-23

Datasheet:STS4NF100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	4A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS4N
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	58 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.07Ohm
Drain to Source Breakdown Voltage	100V
Height	1.25mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free