FDD16AN08A0-F085

new-10%

Manufacturer part number:FDD16AN08A0-F085

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 75V 50A DPAK

Case Package:SOT-23

Datasheet:FDD16AN08A0-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, UltraFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	135W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	135W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1874pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	54ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	75V
Avalanche Energy Rating (Eas)	95 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant