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FDD4141-F085P

  • FDD4141-F085P
  • FDD4141-F085P

FDD4141-F085P

FDD4141-F085P

ON Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 12.3m Ω @ 12.7A, 10V ±20V 2775pF @ 20V 50nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

FDD4141-F085P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.4W Ta 69W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12.3m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2775pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10.8A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
FDD4141-F085P Product Details

FDD4141-F085P  Description

This P-Channel MOSFET has been produced using ON Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefits in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.



FDD4141-F085P  Features

Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A

Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A

High-performance trench technology for extremely low rDS(on)

Qualified to AEC Q101

RoHS Compliant



FDD4141-F085P  Applications

Inverter

Power Supplies




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