FDD6637-F085

new-10%

Manufacturer part number:FDD6637-F085

Manufacturer:ON Semiconductor

Description:MOSFET Trans MOS P-Ch 35V 13A 3-Pin 2+Tab

Case Package:SOT-23

Datasheet:FDD6637-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	68W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.6m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2370pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Drain to Source Voltage (Vdss)	35V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Drain Current-Max (Abs) (ID)	21A
Drain-source On Resistance-Max	0.0116Ohm
DS Breakdown Voltage-Min	35V
Avalanche Energy Rating (Eas)	61 mJ