NVB6410ANT4G

new-10%

Manufacturer part number:NVB6410ANT4G

Manufacturer:ON Semiconductor

Description:MOSFET NFET D2PAK 100V 76A 13MOH

Case Package:SOT-23

Datasheet:NVB6410ANT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	188W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	188W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13m Ω @ 76A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	76A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	170ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	190 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	76A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	500 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free