TK16G60W,RVQ

new-10%

Manufacturer part number:TK16G60W,RVQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N CH 600V 15.8A D2PAK

Case Package:SOT-23

Datasheet:TK16G60W,RVQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2013
Series	DTMOSIV
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	130W Tc
Element Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 790μA
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 300V
Current - Continuous Drain (Id) @ 25°C	15.8A Ta
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	15.8A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	1.35nF
FET Feature	Super Junction
Drain to Source Resistance	190mOhm
Rds On Max	190 mΩ
RoHS Status	RoHS Compliant