PSMN4R0-40YS,115

new-10%

Manufacturer part number:PSMN4R0-40YS,115

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PSMN4R0-40YS,115 - MOSFET, N CHANNEL, 40V, 100A, 4-SOT-669

Case Package:SOT-23

Datasheet:PSMN4R0-40YS,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Digi-Reel®
Published	2010
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	5.6MOhm
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	106W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	106W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2410pF @ 20V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	77 mJ
Height	6.35mm
Length	6.35mm
Width	6.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free