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SI6443DQ-T1-E3

SI6443DQ-T1-E3

SI6443DQ-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 7.3A 8-TSSOP

SOT-23

SI6443DQ-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 12MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.05W Ta
Element Configuration Single
Power Dissipation 1.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.3A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 21ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 12mOhm
Rds On Max 12 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.463755 $0.463755
10 $0.437504 $4.37504
100 $0.412740 $41.274
500 $0.389377 $194.6885
1000 $0.367337 $367.337

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