IXFN24N100F

new-10%

Manufacturer part number:IXFN24N100F

Manufacturer:IXYS

Description:IXYS RF IXFN24N100F RF FET Transistor, 1 kV, 24 A, 600 W, 500 kHz, SOT-227B

Case Package:SOT-23

Datasheet:IXFN24N100F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Supplier Device Package	SOT-227B
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	HiPerRF™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	600W Tc
Power Dissipation	600W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Drain to Source Resistance	390mOhm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant