FDFME2P823ZT

new-10%

Manufacturer part number:FDFME2P823ZT

Manufacturer:ON Semiconductor

Description:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode

Case Package:SOT-23

Datasheet:FDFME2P823ZT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	ESD PROTECTION
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Number of Elements	1
Power Dissipation-Max	1.4W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Case Connection	DRAIN
Turn On Delay Time	4.7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	142m Ω @ 2.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 4.5V
Rise Time	4.8ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	2.6A
Threshold Voltage	-600mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	2.3A
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	-600 mV
Feedback Cap-Max (Crss)	75 pF
Height	550μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant