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SCT30N120H

  • SCT30N120H
  • SCT30N120H

SCT30N120H

SCT30N120H

STMicroelectronics

PTD WBG & POWER RF

SOT-23

SCT30N120H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 270W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 400V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $24.51000 $24.51
500 $24.2649 $12132.45
1000 $24.0198 $24019.8
1500 $23.7747 $35662.05
2000 $23.5296 $47059.2
2500 $23.2845 $58211.25

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