SQJ422EP-T1_GE3

new-10%

Manufacturer part number:SQJ422EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 75A PPAK SO-8

Case Package:SOT-23

Datasheet:SQJ422EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	6
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Power Dissipation	83W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.4m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4660pF @ 20V
Current - Continuous Drain (Id) @ 25°C	74A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	75A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free