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FDFS6N548

FDFS6N548

FDFS6N548

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 23m Ω @ 7A, 10V ±20V 700pF @ 15V 13nC @ 10V 8-SOIC (0.154, 3.90mm Width)

SOT-23

FDFS6N548 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 23MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6 ns
Forward Current 2mA
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Forward Voltage 450mV
Fall Time (Typ) 2 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
Dual Supply Voltage 30V
FET Feature Schottky Diode (Isolated)
Nominal Vgs 1.8 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.61859 $1.23718
5,000 $0.58936 $2.9468
12,500 $0.56849 $6.82188
FDFS6N548 Product Details

FDFS6N548 Description


FDFS6N548 is a 30v Integrated N-Channel POWERTRENCH? MOSFET and Schottky Diode. The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO?8 package. The FDFS6N548 is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on?state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies



FDFS6N548 Features


  • Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A

  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A

  • VF < 0.45V @ 2A

  • VF < 0.28V @ 100mA

  • Schottky and MOSFET incorporated into single power surface mount SO-8 package

  • Electrically independent Schottky and MOSFET pinout for design flexibility

  • Low Miller Charge



FDFS6N548 Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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