TSM120N10PQ56 RLG

new-10%

Manufacturer part number:TSM120N10PQ56 RLG

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET N-CH 100V 58A 8PDFN

Case Package:SOT-23

Datasheet:TSM120N10PQ56 RLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-PDFN (5x6)
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	36W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3902pF @ 30V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant