FDG6301N MOSFET Description

Onsemi's patented, high cell density, DMOS technology is used to manufacture the FDG6301N dual N-Channel logic level enhancement MOSFET. This ultra-high-density technique is specifically designed to reduce on-state resistance. This device was created to replace bipolar digital transistors and tiny signal MOSFETs in low voltage applications. The FDG6301N MOSFET is widely renowned for its low drain-on-resistance and durable ESD architecture.

FDG6301N MOSFET Features

• 25 V, 0.22 A continuous, 0.65 A peak

• Low RDS(ON) = 4 Ω @ VGS= 4.5 V

• Very low-level gate drive requirements allow direct operation in 3 V circuits (VGS(th) < 1.5 V).

• Gate-Source Zener for ESD ruggedness

• Compact industry standard SC70-6 surface mount package

FDG6301N MOSFET Applications

• High Current, High-Speed Switching

• Up to 12s Battery Power Tools

• Buck Converters

• Power Converters with Multi-Megahertz Operation

• Three-Phase Bridge for Brushless DC Motor Control

• Lighting Applications

• Other Half and Full-Bridge Topologies

• Off-Line Power Supplies

• PFC Controllers

• Adapters

• Battery Management