FDG8842CZ            Description

 These Numbp channel logic level enhanced mode field effect transistors are manufactured using on Semiconductor's proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is specially designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.

FDG8842CZ                Features

Q1: N-Channel

 Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A

 Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A

Q2: P-Channel

 Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A

 Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A

 Very low level gate drive requirements allowing direct

operation in 3V circuits(VGS(th) <1.5V)

 Very small package outline SC70-6

 RoHS Compliant

FDG8842CZ         Applications

  low-voltage applications