FDH047AN08A0

new-10%

Manufacturer part number:FDH047AN08A0

Manufacturer:ON Semiconductor

Description:MOSFET N-Channel PowerTrench MOSFET

Case Package:SOT-23

Datasheet:FDH047AN08A0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	4.7MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	75V
Technology	MOSFET (Metal Oxide)
Current Rating	80A
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	138nC @ 10V
Rise Time	88ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Avalanche Energy Rating (Eas)	475 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free