Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDH055N15A

FDH055N15A

FDH055N15A

ON Semiconductor

FDH055N15A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDH055N15A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 429W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation429W
Turn On Delay Time35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9445pF @ 75V
Current - Continuous Drain (Id) @ 25°C 158A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time67ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 167A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0059Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 668A
Height 4.82mm
Length 20.82mm
Width 15.87mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1150 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.12000$6.12
10$5.48600$54.86
450$4.10509$1847.2905
900$3.36133$3025.197

FDH055N15A Product Details

FDH055N15A Description

ThE N-Channel MOSFET FDH055N15A is produced using ON Semiconductor’s advanced Power Trench? process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance.
FDH055N15A Features

? RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low RDS(on)
? High Power and Current Handling Capability
? RoHS Compliant
FDH055N15A Applications

Synchronous Rectification for ATX / Sever / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
New energy vehicles

Get Subscriber

Enter Your Email Address, Get the Latest News