FDH055N15A

new-10%

Manufacturer part number:FDH055N15A

Manufacturer:ON Semiconductor

Description:FDH055N15A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDH055N15A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	429W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	429W
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.9m Ω @ 120A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9445pF @ 75V
Current - Continuous Drain (Id) @ 25°C	158A Tc
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Rise Time	67ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	71 ns
Continuous Drain Current (ID)	167A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0059Ohm
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	668A
Height	4.82mm
Length	20.82mm
Width	15.87mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free