2SK3746 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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2SK3746 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tray
Published
2005
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Technology
MOSFET (Metal Oxide)
Pin Count
3
Number of Elements
1
Power Dissipation-Max
2.5W Ta 110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2A Ta
Gate Charge (Qg) (Max) @ Vgs
37.5nC @ 10V
Rise Time
37ns
Drain to Source Voltage (Vdss)
1500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
59 ns
Turn-Off Delay Time
152 ns
Continuous Drain Current (ID)
2A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2A
Drain to Source Breakdown Voltage
1.5kV
Pulsed Drain Current-Max (IDM)
4A
Dual Supply Voltage
1.5kV
Avalanche Energy Rating (Eas)
42 mJ
Nominal Vgs
3.5 V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.74000
$3.74
500
$3.7026
$1851.3
1000
$3.6652
$3665.2
1500
$3.6278
$5441.7
2000
$3.5904
$7180.8
2500
$3.553
$8882.5
2SK3746 Product Details
Description
The 2SK3746 is an N-Channel Power MOSFET, 1500V, 2A, 13Ω, TO-3P-3L. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
Features
High reliability (Adoption of HVP process)
Low ON resistance, low input capacitance, Ultrahigh-speed switching