RFD16N05 Description
The ON Semiconductor RFD16N05 is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It can be operated directly from integrated circuits.
RFD16N05 Features
Peak Current vs Pulse Width Curve
UIS Rating Curve
175°C Operating Temperature
16A, 50V
rDS(ON)= 0.047Ω
Temperature Compensating PSPICE Model
RFD16N05 Applications
