FDH27N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDH27N50 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
450W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
190mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
27A Tc
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
FDH27N50 Product Details
FDH27N50 Description
FDH27N50 is a 500v N-Channel SMPS Power MOSFET. The onsemi FDH27N50 can be applied in Switch Mode Power Supplies(SMPS), such as PFC Boost, Two-Switch Forward Converter, Single Switch Forward Converter, Flyback Converter, Buck Converter, and High-Speed Switching. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET FDH27N50 is in the TO-247-3 package with 450W power dissipation.
FDH27N50 Features
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche, and High Reapplied dv/dt Ruggedness
Reduced rDS(ON)
Reduced Miller Capacitance and Low Input Capacitance