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FDH27N50

FDH27N50

FDH27N50

ON Semiconductor

FDH27N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDH27N50 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 450W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
FDH27N50 Product Details

FDH27N50 Description


FDH27N50 is a 500v N-Channel SMPS Power MOSFET. The onsemi FDH27N50 can be applied in Switch Mode Power Supplies(SMPS), such as PFC Boost, Two-Switch Forward Converter, Single Switch Forward Converter, Flyback Converter, Buck Converter, and High-Speed Switching. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET FDH27N50 is in the TO-247-3 package with 450W power dissipation.



FDH27N50 Features


  • Low Gate Charge Qg results in Simple Drive Requirement

  • Improved Gate, Avalanche, and High Reapplied dv/dt Ruggedness

  • Reduced rDS(ON)

  • Reduced Miller Capacitance and Low Input Capacitance

  • Improved Switching Speed with Low EMI

  • 175°C Rated Junction Temperature



FDH27N50 Applications


  • PFC Boost

  • Two-Switch Forward Converter

  • Single Switch Forward Converter

  • Flyback Converter

  • Buck Converter

  • High Speed Switching


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