SIE854DF-T1-GE3

new-10%

Manufacturer part number:SIE854DF-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 100V 64A 125W 14.2mohm @ 10V

Case Package:SOT-23

Datasheet:SIE854DF-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	10
JESD-30 Code	R-PDSO-N4
Number of Elements	1
Power Dissipation-Max	5.2W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.2W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.2m Ω @ 13.2A, 10V
Vgs(th) (Max) @ Id	4.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 50V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	13.2A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	60A
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	80 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant