NTHD3101FT3G

new-10%

Manufacturer part number:NTHD3101FT3G

Manufacturer:ON Semiconductor

Description:MOSFET -20V -4.4A P-Channel w/4.1A Schottky

Case Package:SOT-23

Datasheet:NTHD3101FT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-4.4A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	680pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.2A Tj
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 4.5V
Rise Time	11.7ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	12.4 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	3.2A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	13A
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant
Lead Free	Lead Free