FDL100N50F

new-10%

Manufacturer part number:FDL100N50F

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 55m Ω @ 50A, 10V ±30V 12000pF @ 25V 238nC @ 10V TO-264-3, TO-264AA

Case Package:SOT-23

Datasheet:FDL100N50F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET™
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5kW
Turn On Delay Time	63 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	238nC @ 10V
Rise Time	186ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	105 ns
Turn-Off Delay Time	202 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.055Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	5000 mJ
Max Junction Temperature (Tj)	150°C
Height	29mm
Length	20mm
Width	5mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant