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2SK1835-E

2SK1835-E

2SK1835-E

Renesas Electronics America

MOSFET N-CH 1500V 4A TO-3P

SOT-23

2SK1835-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Copper, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7 Ω @ 2A, 15V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Rise Time 80ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±20V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 7Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.247886 $16.247886
10 $15.328193 $153.28193
100 $14.460560 $1446.056
500 $13.642038 $6821.019
1000 $12.869847 $12869.847

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