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NVMFS5C612NLAFT1G

NVMFS5C612NLAFT1G

NVMFS5C612NLAFT1G

ON Semiconductor

NVMFS5C612NLAFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVMFS5C612NLAFT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 3.8W Ta 167W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.36m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Ta 250A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $1.31428 $1.31428
NVMFS5C612NLAFT1G Product Details

NVMFS5C612NLAFT1G Description


NVMFS5C612NLAFT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. It is able to minimize conduction losses based on low RDS (on) and minimize driver losses based on low QG and capacitance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including switching applications, synchronous rectification, and uninterruptible power supplies.



NVMFS5C612NLAFT1G Features


  • Low RDS(on)

  • Low conduction losses

  • Advanced switching performance

  • High dv/dt capability

  • Available in the DFN5 (SO-8FL) package



NVMFS5C612NLAFT1G Applications


  • Switching applications

  • Synchronous rectification

  • Uninterruptible power supplies


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