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FF6MR12W2M1B11BOMA1

  • FF6MR12W2M1B11BOMA1
  • FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1

Infineon Technologies

FF6MR12W2M1B11BOMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

FF6MR12W2M1B11BOMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C TJ
Series CoolSiC™+
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 20mW Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 5.63m Ω @ 200A, 15V
Vgs(th) (Max) @ Id 5.55V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C 200A Tj
Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V
Drain to Source Voltage (Vdss) 1200V
FET Feature Silicon Carbide (SiC)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $304.56000 $304.56
15 $291.69267 $4375.39005
FF6MR12W2M1B11BOMA1 Product Details

FF6MR12W2M1B11BOMA1               Description


FF6MR12W2M1B11BOMA1 is a Easy DUAL Modul mit CoolSiC?TrenchMOSFETundPressFIT/NTC.

 

FF6MR12W2M1B11BOMA1                       Applications


?¤High Frequency Switching application

?¤DC/DC converter

?¤Solar applications

?¤UPS systems

 

FF6MR12W2M1B11BOMA1                         Features


?¤High current density

Low inductive design

?¤Low switching losses

 





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