FDMA430NZ

new-10%

Manufacturer part number:FDMA430NZ

Manufacturer:ON Semiconductor

Description:FDMA430NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMA430NZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Number of Pins	6
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	40MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.4W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	900mW
Case Connection	DRAIN
Turn On Delay Time	8.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	7.1ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	7.1 ns
Turn-Off Delay Time	18.1 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	810mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	20A
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	810 mV
Height	825μm
Length	2mm
Width	2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free