APT14M100B

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APT14M100B

Manufacturer part number:APT14M100B

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH Si 1KV 14A 3-Pin(3+Tab) TO-247 Tube

Case Package:SOT-23

Datasheet:APT14M100B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	14A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	DRAIN
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3965pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	29ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.88Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	55A
Avalanche Energy Rating (Eas)	875 mJ
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free