DMN2600UFB-7

new-10%

Manufacturer part number:DMN2600UFB-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH DFN1006-3

Case Package:SOT-23

Datasheet:DMN2600UFB-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-UFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY, LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	2
Power Dissipation-Max	540mW Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	4.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	70.13pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.3A Ta
Gate Charge (Qg) (Max) @ Vgs	0.85nC @ 4.5V
Rise Time	11.5ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	20.9 ns
Turn-Off Delay Time	34.8 ns
Continuous Drain Current (ID)	1.3A
Gate to Source Voltage (Vgs)	8V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant