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FDMA6023PZT

FDMA6023PZT

FDMA6023PZT

ON Semiconductor

FDMA6023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA6023PZT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Max Power Dissipation 1.4W
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 13 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 885pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 11ns
Fall Time (Typ) 11 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) -3.6A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -500 mV
Feedback Cap-Max (Crss) 150 pF
Height 500μm
Length 2mm
Width 2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.31900 $0.957
6,000 $0.29700 $1.782
15,000 $0.28600 $4.29
30,000 $0.28000 $8.4
FDMA6023PZT Product Details

FDMA6023PZT          Description

 

 The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 2X2 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for linear mode applications.

 


FDMA6023PZT            Features

 

Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A

Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A

Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A

Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A

Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin

HBM ESD protection level > 2.4 kV typical (Note 3)

RoHS Compliant

Free from halogenated compounds and antimony oxides


FDMA6023PZT              Applications


This product is general usage and suitable for many different applications.

 

 





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