This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been optimized for the on-state resistance and yet maintains superior switching performance.
FDMA86265P Features
Max rDS(on) = 1.2 |? at VGS = -10 V, ID = -1 A
Max rDS(on) = 1.4 |? at VGS = -6 V, ID = -0.9 A
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
Very low RDS-on mid voltage P-channel silicon technology optimized for low Qg
This product is optimized for fast switching applications as well as load switch applications