TK5Q60W,S1VQ

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Manufacturer part number:TK5Q60W,S1VQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N CH 600V 5.4A IPAK

Case Package:SOT-23

Datasheet:TK5Q60W,S1VQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	900mOhm
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	60W Tc
Element Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	900m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id	3.7V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 300V
Current - Continuous Drain (Id) @ 25°C	5.4A Ta
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	5.4A
Gate to Source Voltage (Vgs)	30V
FET Feature	Super Junction
RoHS Status	RoHS Compliant