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IXFP56N30X3

IXFP56N30X3

IXFP56N30X3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 27m Ω @ 28A, 10V ±20V 3.75nF @ 25V 56nC @ 10V 300V TO-220-3

SOT-23

IXFP56N30X3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 320W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 27m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 3.75nF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.52000 $6.52
50 $5.24260 $262.13
100 $4.77650 $477.65
500 $3.86780 $1933.9
1,000 $3.26200 $3.262
IXFP56N30X3 Product Details

IXFP56N30X3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3.75nF @ 25V.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFP56N30X3 Features


a 300V drain to source voltage (Vdss)


IXFP56N30X3 Applications


There are a lot of IXYS
IXFP56N30X3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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