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FDMA908PZ

FDMA908PZ

FDMA908PZ

ON Semiconductor

FDMA908PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMA908PZ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.5m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3957pF @ 6V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 71 ns
Turn-Off Delay Time 131 ns
Continuous Drain Current (ID) -12A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 903 pF
Height 850μm
Length 2.05mm
Width 2.05mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
FDMA908PZ Product Details

FDMA908PZ Description


The FDMA908PZ is a single P-Channel power MOSFET developed for battery charging and load switching in mobile phones and other ultraportable devices. It has a low-on-state resistance MOSFET and ESD protection through a zener diode. According to the FDMA908PZ datasheet, the MicroFET 2X2 package has remarkable thermal performance for its physical size and is well suited to linear mode applications.



FDMA908PZ Features


  • RoHS Compliant

  • Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A

  • HBM ESD protection level > 2.8 kV typical (Note 3)

  • Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A

  • Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A

  • Free from halogenated compounds and antimony oxides

  • Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm



FDMA908PZ Applications


  • Battery charge

  • Load switching in cellular handset

  • Other ultraportable applications


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