FDMC4435BZ

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FDMC4435BZ

Manufacturer part number:FDMC4435BZ

Manufacturer:ON Semiconductor

Description:FDMC4435BZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC4435BZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	200mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	20MOhm
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.3W Ta 31W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.3W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2045pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8.5A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	6ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	-8.5A
Threshold Voltage	-1.9V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	24 mJ
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.9 V
Height	800μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free