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FDMC6688P

  • FDMC6688P
  • FDMC6688P

FDMC6688P

FDMC6688P

ON Semiconductor

FDMC6688P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMC6688P Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 26.8mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7435pF @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 56A
JEDEC-95 Code MO-240BA
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 226A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.023040 $7.02304
10 $6.625509 $66.25509
100 $6.250481 $625.0481
500 $5.896680 $2948.34
1000 $5.562905 $5562.905
FDMC6688P Product Details

FDMC6688P Description


FDMC6688P is a P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced [email protected] process that has been optimized for rDs(ON)， switching performance, and ruggedness. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been optimized for rDs(ON)， switching performance, and ruggedness. 



FDMC6688P Features


  • Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A

  • Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A

  • Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A

  • High-performance trench technology for extremely low rDS(on)

  • High power and current handling capability in a widely used surface mount package

  • Lead-free and RoHS Compliant



FDMC6688P Applications


  • Load Switch

  • Battery Management

  • Power Management

  • Reverse Polarity Protection


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