SI8445DB-T2-E1

new-10%

Manufacturer part number:SI8445DB-T2-E1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 9.8A MICROFOOT

Case Package:SOT-23

Datasheet:SI8445DB-T2-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Power Dissipation-Max	1.8W Ta 11.4W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	84m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 10V
Current - Continuous Drain (Id) @ 25°C	9.8A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	-9.8A
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	3.9A
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant