QH8MA2TCR

new-10%

Manufacturer part number:QH8MA2TCR

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 30V 4.5A/3A TSMT8

Case Package:SOT-23

Datasheet:QH8MA2TCR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Max Power Dissipation	1.25W
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	365pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.5A 3A
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 10V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	3A
Drain Current-Max (Abs) (ID)	4.5A
Drain-source On Resistance-Max	0.0056Ohm
Pulsed Drain Current-Max (IDM)	12A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	1.5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant