ZXMHC10A07N8TC

new-10%

Manufacturer part number:ZXMHC10A07N8TC

Manufacturer:Diodes Incorporated

Description:ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8

Case Package:SOT-23

Datasheet:ZXMHC10A07N8TC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	870mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	ZXMHC10A07
Pin Count	8
Number of Elements	4
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.36W
Turn On Delay Time	1.6 ns
FET Type	2 N and 2 P-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	138pF @ 60V
Current - Continuous Drain (Id) @ 25°C	800mA 680mA
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V
Rise Time	2.1ns
Drain to Source Voltage (Vdss)	100V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	3.3 ns
Turn-Off Delay Time	5.9 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
Drain-source On Resistance-Max	0.7Ohm
Drain to Source Breakdown Voltage	-100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free