FDMC86139P

new-10%

FDMC86139P

Manufacturer part number:FDMC86139P

Manufacturer:ON Semiconductor

Description:FDMC86139P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC86139P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	ACTIVE (Last Updated: 14 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	165.33333mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.3W Ta 40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	67m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1335pF @ 50V
Current - Continuous Drain (Id) @ 25°C	4.4A Ta 15A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	2.5ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±25V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	-4.4A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.067Ohm
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	30A
Max Junction Temperature (Tj)	150°C
Turn Off Time-Max (toff)	40ns
Turn On Time-Max (ton)	30ns
Height	800μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free